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High-hole mobility polycrystalline Ge on an insulator formed by controlling precursor atomic density for solid-phase crystallization
High-carrier mobility semiconductors on insulators are essential for fabricating advanced thin-film transistors, allowing for three-dimensional integrated circuits or high-performance mobile terminals. We investigate the low-temperature (375–450 °C) solid-phase crystallization (SPC) of Ge on a glass...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2017
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5717061/ https://www.ncbi.nlm.nih.gov/pubmed/29209030 http://dx.doi.org/10.1038/s41598-017-17273-6 |