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High-hole mobility polycrystalline Ge on an insulator formed by controlling precursor atomic density for solid-phase crystallization

High-carrier mobility semiconductors on insulators are essential for fabricating advanced thin-film transistors, allowing for three-dimensional integrated circuits or high-performance mobile terminals. We investigate the low-temperature (375–450 °C) solid-phase crystallization (SPC) of Ge on a glass...

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Autores principales: Toko, Kaoru, Yoshimine, Ryota, Moto, Kenta, Suemasu, Takashi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5717061/
https://www.ncbi.nlm.nih.gov/pubmed/29209030
http://dx.doi.org/10.1038/s41598-017-17273-6
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author Toko, Kaoru
Yoshimine, Ryota
Moto, Kenta
Suemasu, Takashi
author_facet Toko, Kaoru
Yoshimine, Ryota
Moto, Kenta
Suemasu, Takashi
author_sort Toko, Kaoru
collection PubMed
description High-carrier mobility semiconductors on insulators are essential for fabricating advanced thin-film transistors, allowing for three-dimensional integrated circuits or high-performance mobile terminals. We investigate the low-temperature (375–450 °C) solid-phase crystallization (SPC) of Ge on a glass substrate, focusing on the precursor conditions. The substrate temperature during the precursor deposition, T (d), ranged from 50 to 200 °C. According to the atomic density of the precursor and the T (d) dependent SPC properties, the precursor conditions were determined by three regimes: the low-density regime (T (d) < 100 °C), high-density regime (100 ≤ T (d) ≤ 125 °C), and nucleation regime (T (d) > 125 °C). The use of the precursor in the narrow high-density regime enabled us to form SPC-Ge with a hole mobility of 340 cm(2)/Vs, the highest value among semiconductor thin films grown on insulators at low temperature (<900 °C). The origins of the high hole mobility were determined to be both a large grain size (5 µm) and a low energy barrier height (6.4 meV) for the grain boundary. The findings from and knowledge gained in this study, that is, the influence of the precursor conditions on subsequent crystal growth, will be universal and applicable to various materials.
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spelling pubmed-57170612017-12-08 High-hole mobility polycrystalline Ge on an insulator formed by controlling precursor atomic density for solid-phase crystallization Toko, Kaoru Yoshimine, Ryota Moto, Kenta Suemasu, Takashi Sci Rep Article High-carrier mobility semiconductors on insulators are essential for fabricating advanced thin-film transistors, allowing for three-dimensional integrated circuits or high-performance mobile terminals. We investigate the low-temperature (375–450 °C) solid-phase crystallization (SPC) of Ge on a glass substrate, focusing on the precursor conditions. The substrate temperature during the precursor deposition, T (d), ranged from 50 to 200 °C. According to the atomic density of the precursor and the T (d) dependent SPC properties, the precursor conditions were determined by three regimes: the low-density regime (T (d) < 100 °C), high-density regime (100 ≤ T (d) ≤ 125 °C), and nucleation regime (T (d) > 125 °C). The use of the precursor in the narrow high-density regime enabled us to form SPC-Ge with a hole mobility of 340 cm(2)/Vs, the highest value among semiconductor thin films grown on insulators at low temperature (<900 °C). The origins of the high hole mobility were determined to be both a large grain size (5 µm) and a low energy barrier height (6.4 meV) for the grain boundary. The findings from and knowledge gained in this study, that is, the influence of the precursor conditions on subsequent crystal growth, will be universal and applicable to various materials. Nature Publishing Group UK 2017-12-05 /pmc/articles/PMC5717061/ /pubmed/29209030 http://dx.doi.org/10.1038/s41598-017-17273-6 Text en © The Author(s) 2017 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Toko, Kaoru
Yoshimine, Ryota
Moto, Kenta
Suemasu, Takashi
High-hole mobility polycrystalline Ge on an insulator formed by controlling precursor atomic density for solid-phase crystallization
title High-hole mobility polycrystalline Ge on an insulator formed by controlling precursor atomic density for solid-phase crystallization
title_full High-hole mobility polycrystalline Ge on an insulator formed by controlling precursor atomic density for solid-phase crystallization
title_fullStr High-hole mobility polycrystalline Ge on an insulator formed by controlling precursor atomic density for solid-phase crystallization
title_full_unstemmed High-hole mobility polycrystalline Ge on an insulator formed by controlling precursor atomic density for solid-phase crystallization
title_short High-hole mobility polycrystalline Ge on an insulator formed by controlling precursor atomic density for solid-phase crystallization
title_sort high-hole mobility polycrystalline ge on an insulator formed by controlling precursor atomic density for solid-phase crystallization
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5717061/
https://www.ncbi.nlm.nih.gov/pubmed/29209030
http://dx.doi.org/10.1038/s41598-017-17273-6
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