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High-hole mobility polycrystalline Ge on an insulator formed by controlling precursor atomic density for solid-phase crystallization

High-carrier mobility semiconductors on insulators are essential for fabricating advanced thin-film transistors, allowing for three-dimensional integrated circuits or high-performance mobile terminals. We investigate the low-temperature (375–450 °C) solid-phase crystallization (SPC) of Ge on a glass...

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Detalles Bibliográficos
Autores principales: Toko, Kaoru, Yoshimine, Ryota, Moto, Kenta, Suemasu, Takashi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5717061/
https://www.ncbi.nlm.nih.gov/pubmed/29209030
http://dx.doi.org/10.1038/s41598-017-17273-6

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