Proton dose distribution measurements using a MOSFET detector with a simple dose‐weighted correction method for LET effects

We experimentally evaluated the proton beam dose reproducibility, sensitivity, angular dependence and depth‐dose relationships for a new Metal Oxide Semiconductor Field Effect Transistor (MOSFET) detector. The detector was fabricated with a thinner oxide layer and was operated at high‐bias voltages....

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Detalles Bibliográficos
Autores principales: Kohno, Ryosuke, Hotta, Kenji, Matsuura, Taeko, Matsubara, Kana, Nishioka, Shie, Nishio, Teiji, Kawashima, Mitsuhiko, Ogino, Takashi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2011
Materias:
Radiation Oncology Physics
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5718688/
https://www.ncbi.nlm.nih.gov/pubmed/21587191
http://dx.doi.org/10.1120/jacmp.v12i2.3431

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5718688/
https://www.ncbi.nlm.nih.gov/pubmed/21587191
http://dx.doi.org/10.1120/jacmp.v12i2.3431

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