In operando x-ray imaging of nanoscale devices: Composition, valence, and internal electrical fields

We introduce a method for directly imaging depletion layers in operando with elemental specificity and chemical speciation at sub–100 nm spatial resolution applicable to today’s three-dimensional electronic architectures. These typically contain complex, multicomponent designs consisting of epitaxia...

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Detalles Bibliográficos
Autores principales: Johannes, Andreas, Salomon, Damien, Martinez-Criado, Gema, Glaser, Markus, Lugstein, Alois, Ronning, Carsten
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Association for the Advancement of Science 2017
Materias:
Research Articles
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5722647/
https://www.ncbi.nlm.nih.gov/pubmed/29226247
http://dx.doi.org/10.1126/sciadv.aao4044

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5722647/
https://www.ncbi.nlm.nih.gov/pubmed/29226247
http://dx.doi.org/10.1126/sciadv.aao4044

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