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Remote control of resistive switching in TiO(2) based resistive random access memory device
We report on the magnetic field control of a bipolar resistive switching in Ag/TiO(2)/FTO based resistive random access memory device through I–V characteristics. Essentially, in the presence of magnetic field and in the low resistance state, an abrupt change in the resistance of the device demands...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Nature Publishing Group UK
2017
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5722857/ https://www.ncbi.nlm.nih.gov/pubmed/29222470 http://dx.doi.org/10.1038/s41598-017-17607-4 |