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Remote control of resistive switching in TiO(2) based resistive random access memory device

We report on the magnetic field control of a bipolar resistive switching in Ag/TiO(2)/FTO based resistive random access memory device through I–V characteristics. Essentially, in the presence of magnetic field and in the low resistance state, an abrupt change in the resistance of the device demands...

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Detalles Bibliográficos
Autores principales:	Sahu, Dwipak Prasad, Jammalamadaka, S. Narayana
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group UK 2017
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5722857/ https://www.ncbi.nlm.nih.gov/pubmed/29222470 http://dx.doi.org/10.1038/s41598-017-17607-4

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