Cargando…
Enhanced electronic-transport modulation in single-crystalline VO(2) nanowire-based solid-state field-effect transistors
Field-effect transistors using correlated electron materials with an electronic phase transition pave a new avenue to realize steep slope switching, to overcome device size limitations and to investigate fundamental science. Here, we present a new finding in gate-bias-induced electronic transport sw...
Autores principales: | , , , , , |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2017
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5722937/ https://www.ncbi.nlm.nih.gov/pubmed/29222452 http://dx.doi.org/10.1038/s41598-017-17468-x |