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Enhanced electronic-transport modulation in single-crystalline VO(2) nanowire-based solid-state field-effect transistors

Field-effect transistors using correlated electron materials with an electronic phase transition pave a new avenue to realize steep slope switching, to overcome device size limitations and to investigate fundamental science. Here, we present a new finding in gate-bias-induced electronic transport sw...

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Detalles Bibliográficos
Autores principales: Wei, Tingting, Kanki, Teruo, Chikanari, Masashi, Uemura, Takafumi, Sekitani, Tsuyoshi, Tanaka, Hidekazu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5722937/
https://www.ncbi.nlm.nih.gov/pubmed/29222452
http://dx.doi.org/10.1038/s41598-017-17468-x
_version_ 1783285108916092928
author Wei, Tingting
Kanki, Teruo
Chikanari, Masashi
Uemura, Takafumi
Sekitani, Tsuyoshi
Tanaka, Hidekazu
author_facet Wei, Tingting
Kanki, Teruo
Chikanari, Masashi
Uemura, Takafumi
Sekitani, Tsuyoshi
Tanaka, Hidekazu
author_sort Wei, Tingting
collection PubMed
description Field-effect transistors using correlated electron materials with an electronic phase transition pave a new avenue to realize steep slope switching, to overcome device size limitations and to investigate fundamental science. Here, we present a new finding in gate-bias-induced electronic transport switching in a correlated electron material, i.e., a VO(2) nanowire channel through a hybrid gate, which showed an enhancement in the resistive modulation efficiency accompanied by expansion of metallic nano-domains in an insulating matrix by applying gate biases near the metal-insulator transition temperature. Our results offer an understanding of the innate ability of coexistence state of metallic and insulating domains in correlated materials through carrier tuning and serve as a valuable reference for further research into the development of correlated materials and their devices.
format Online
Article
Text
id pubmed-5722937
institution National Center for Biotechnology Information
language English
publishDate 2017
publisher Nature Publishing Group UK
record_format MEDLINE/PubMed
spelling pubmed-57229372017-12-12 Enhanced electronic-transport modulation in single-crystalline VO(2) nanowire-based solid-state field-effect transistors Wei, Tingting Kanki, Teruo Chikanari, Masashi Uemura, Takafumi Sekitani, Tsuyoshi Tanaka, Hidekazu Sci Rep Article Field-effect transistors using correlated electron materials with an electronic phase transition pave a new avenue to realize steep slope switching, to overcome device size limitations and to investigate fundamental science. Here, we present a new finding in gate-bias-induced electronic transport switching in a correlated electron material, i.e., a VO(2) nanowire channel through a hybrid gate, which showed an enhancement in the resistive modulation efficiency accompanied by expansion of metallic nano-domains in an insulating matrix by applying gate biases near the metal-insulator transition temperature. Our results offer an understanding of the innate ability of coexistence state of metallic and insulating domains in correlated materials through carrier tuning and serve as a valuable reference for further research into the development of correlated materials and their devices. Nature Publishing Group UK 2017-12-08 /pmc/articles/PMC5722937/ /pubmed/29222452 http://dx.doi.org/10.1038/s41598-017-17468-x Text en © The Author(s) 2017 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Wei, Tingting
Kanki, Teruo
Chikanari, Masashi
Uemura, Takafumi
Sekitani, Tsuyoshi
Tanaka, Hidekazu
Enhanced electronic-transport modulation in single-crystalline VO(2) nanowire-based solid-state field-effect transistors
title Enhanced electronic-transport modulation in single-crystalline VO(2) nanowire-based solid-state field-effect transistors
title_full Enhanced electronic-transport modulation in single-crystalline VO(2) nanowire-based solid-state field-effect transistors
title_fullStr Enhanced electronic-transport modulation in single-crystalline VO(2) nanowire-based solid-state field-effect transistors
title_full_unstemmed Enhanced electronic-transport modulation in single-crystalline VO(2) nanowire-based solid-state field-effect transistors
title_short Enhanced electronic-transport modulation in single-crystalline VO(2) nanowire-based solid-state field-effect transistors
title_sort enhanced electronic-transport modulation in single-crystalline vo(2) nanowire-based solid-state field-effect transistors
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5722937/
https://www.ncbi.nlm.nih.gov/pubmed/29222452
http://dx.doi.org/10.1038/s41598-017-17468-x
work_keys_str_mv AT weitingting enhancedelectronictransportmodulationinsinglecrystallinevo2nanowirebasedsolidstatefieldeffecttransistors
AT kankiteruo enhancedelectronictransportmodulationinsinglecrystallinevo2nanowirebasedsolidstatefieldeffecttransistors
AT chikanarimasashi enhancedelectronictransportmodulationinsinglecrystallinevo2nanowirebasedsolidstatefieldeffecttransistors
AT uemuratakafumi enhancedelectronictransportmodulationinsinglecrystallinevo2nanowirebasedsolidstatefieldeffecttransistors
AT sekitanitsuyoshi enhancedelectronictransportmodulationinsinglecrystallinevo2nanowirebasedsolidstatefieldeffecttransistors
AT tanakahidekazu enhancedelectronictransportmodulationinsinglecrystallinevo2nanowirebasedsolidstatefieldeffecttransistors