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Enhanced electronic-transport modulation in single-crystalline VO(2) nanowire-based solid-state field-effect transistors
Field-effect transistors using correlated electron materials with an electronic phase transition pave a new avenue to realize steep slope switching, to overcome device size limitations and to investigate fundamental science. Here, we present a new finding in gate-bias-induced electronic transport sw...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2017
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5722937/ https://www.ncbi.nlm.nih.gov/pubmed/29222452 http://dx.doi.org/10.1038/s41598-017-17468-x |