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Multibit memory operation of metal-oxide bi-layer memristors

Emerging nanoionic memristive devices are considered as the memory technology of the future and have been winning a great deal of attention due to their ability to perform fast and at the expense of low-power and -space requirements. Their full potential is envisioned that can be fulfilled through t...

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Detalles Bibliográficos
Autores principales: Stathopoulos, Spyros, Khiat, Ali, Trapatseli, Maria, Cortese, Simone, Serb, Alexantrou, Valov, Ilia, Prodromakis, Themis
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5727485/
https://www.ncbi.nlm.nih.gov/pubmed/29235524
http://dx.doi.org/10.1038/s41598-017-17785-1