Selectable phase formation in VAlN thin films by controlling Al(+) subplantation depth

We report on a thin film synthesis technique which allows for unprecedented control over the crystalline phase formation in metastable transition metal nitride based layers. For the model material system of V(0.26)Al(0.74)N, a complete transition from hexagonal to supersaturated cubic structure is a...

Descripción completa

Detalles Bibliográficos
Autores principales: Greczynski, G., Mráz, S., Hultman, L., Schneider, J. M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5727504/
https://www.ncbi.nlm.nih.gov/pubmed/29235523
http://dx.doi.org/10.1038/s41598-017-17846-5

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5727504/
https://www.ncbi.nlm.nih.gov/pubmed/29235523
http://dx.doi.org/10.1038/s41598-017-17846-5

Ejemplares similares