Cargando…
Selectable phase formation in VAlN thin films by controlling Al(+) subplantation depth
We report on a thin film synthesis technique which allows for unprecedented control over the crystalline phase formation in metastable transition metal nitride based layers. For the model material system of V(0.26)Al(0.74)N, a complete transition from hexagonal to supersaturated cubic structure is a...
Autores principales: | Greczynski, G., Mráz, S., Hultman, L., Schneider, J. M. |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2017
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5727504/ https://www.ncbi.nlm.nih.gov/pubmed/29235523 http://dx.doi.org/10.1038/s41598-017-17846-5 |
Ejemplares similares
-
Dense, single-phase, hard, and stress-free Ti(0.32)Al(0.63)W(0.05)N films grown by magnetron sputtering with dramatically reduced energy consumption
por: Li, X., et al.
Publicado: (2022) -
Self-structuring in Zr(1−x)Al(x)N films as a function of composition and growth temperature
por: Ghafoor, N., et al.
Publicado: (2018) -
Synthesis and characterization of single-phase epitaxial Cr(2)N thin films by reactive magnetron sputtering
por: Gharavi, M. A., et al.
Publicado: (2018) -
Modeling of metastable phase formation diagrams for sputtered thin films
por: Chang, Keke, et al.
Publicado: (2016) -
Thin film and depth profile analysis
por: Etzkorn, H W, et al.
Publicado: (1984)