Excellent Rectifying Properties of the n-3C-SiC/p-Si Heterojunction Subjected to High Temperature Annealing for Electronics, MEMS, and LED Applications

This work examines the stability of epitaxial 3C-SiC/Si heterojunctions subjected to heat treatments between 1000 °C and 1300 °C. Because of the potential for silicon carbide in high temperature and harsh environment applications, and the economic advantages of growing the 3C-SiC polytype on large d...

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Detalles Bibliográficos
Autores principales: Tanner, Philip, Iacopi, Alan, Phan, Hoang-Phuong, Dimitrijev, Sima, Hold, Leonie, Chaik, Kien, Walker, Glenn, Dao, Dzung Viet, Nguyen, Nam-Trung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5735178/
https://www.ncbi.nlm.nih.gov/pubmed/29255167
http://dx.doi.org/10.1038/s41598-017-17985-9

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5735178/
https://www.ncbi.nlm.nih.gov/pubmed/29255167
http://dx.doi.org/10.1038/s41598-017-17985-9

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