Controlling bottom-up rapid growth of single crystalline gallium nitride nanowires on silicon

We report single crystalline gallium nitride nanowire growth from Ni and Ni-Au catalysts on silicon using hydride vapor phase epitaxy. The growth takes place rapidly; efficiency in time is higher than the conventional nanowire growth in metal-organic chemical vapor deposition and thin film growth in...

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Detalles Bibliográficos
Autores principales: Wu, Ko-Li, Chou, Yi, Su, Chang-Chou, Yang, Chih-Chaing, Lee, Wei-I., Chou, Yi-Chia
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5738410/
https://www.ncbi.nlm.nih.gov/pubmed/29263368
http://dx.doi.org/10.1038/s41598-017-17980-0

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5738410/
https://www.ncbi.nlm.nih.gov/pubmed/29263368
http://dx.doi.org/10.1038/s41598-017-17980-0

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