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Quantum Hall states observed in thin films of Dirac semimetal Cd(3)As(2)

A well known semiconductor Cd(3)As(2) has reentered the spotlight due to its unique electronic structure and quantum transport phenomena as a topological Dirac semimetal. For elucidating and controlling its topological quantum state, high-quality Cd(3)As(2) thin films have been highly desired. Here...

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Autores principales: Uchida, Masaki, Nakazawa, Yusuke, Nishihaya, Shinichi, Akiba, Kazuto, Kriener, Markus, Kozuka, Yusuke, Miyake, Atsushi, Taguchi, Yasujiro, Tokunaga, Masashi, Nagaosa, Naoto, Tokura, Yoshinori, Kawasaki, Masashi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5741620/
https://www.ncbi.nlm.nih.gov/pubmed/29273770
http://dx.doi.org/10.1038/s41467-017-02423-1
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author Uchida, Masaki
Nakazawa, Yusuke
Nishihaya, Shinichi
Akiba, Kazuto
Kriener, Markus
Kozuka, Yusuke
Miyake, Atsushi
Taguchi, Yasujiro
Tokunaga, Masashi
Nagaosa, Naoto
Tokura, Yoshinori
Kawasaki, Masashi
author_facet Uchida, Masaki
Nakazawa, Yusuke
Nishihaya, Shinichi
Akiba, Kazuto
Kriener, Markus
Kozuka, Yusuke
Miyake, Atsushi
Taguchi, Yasujiro
Tokunaga, Masashi
Nagaosa, Naoto
Tokura, Yoshinori
Kawasaki, Masashi
author_sort Uchida, Masaki
collection PubMed
description A well known semiconductor Cd(3)As(2) has reentered the spotlight due to its unique electronic structure and quantum transport phenomena as a topological Dirac semimetal. For elucidating and controlling its topological quantum state, high-quality Cd(3)As(2) thin films have been highly desired. Here we report the development of an elaborate growth technique of high-crystallinity and high-mobility Cd(3)As(2) films with controlled thicknesses and the observation of quantum Hall effect dependent on the film thickness. With decreasing the film thickness to 10 nm, the quantum Hall states exhibit variations such as a change in the spin degeneracy reflecting the Dirac dispersion with a large Fermi velocity. Details of the electronic structure including subband splitting and gap opening are identified from the quantum transport depending on the confinement thickness, suggesting the presence of a two-dimensional topological insulating phase. The demonstration of quantum Hall states in our high-quality Cd(3)As(2) films paves a road to study quantum transport and device application in topological Dirac semimetal and its derivative phases.
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spelling pubmed-57416202017-12-29 Quantum Hall states observed in thin films of Dirac semimetal Cd(3)As(2) Uchida, Masaki Nakazawa, Yusuke Nishihaya, Shinichi Akiba, Kazuto Kriener, Markus Kozuka, Yusuke Miyake, Atsushi Taguchi, Yasujiro Tokunaga, Masashi Nagaosa, Naoto Tokura, Yoshinori Kawasaki, Masashi Nat Commun Article A well known semiconductor Cd(3)As(2) has reentered the spotlight due to its unique electronic structure and quantum transport phenomena as a topological Dirac semimetal. For elucidating and controlling its topological quantum state, high-quality Cd(3)As(2) thin films have been highly desired. Here we report the development of an elaborate growth technique of high-crystallinity and high-mobility Cd(3)As(2) films with controlled thicknesses and the observation of quantum Hall effect dependent on the film thickness. With decreasing the film thickness to 10 nm, the quantum Hall states exhibit variations such as a change in the spin degeneracy reflecting the Dirac dispersion with a large Fermi velocity. Details of the electronic structure including subband splitting and gap opening are identified from the quantum transport depending on the confinement thickness, suggesting the presence of a two-dimensional topological insulating phase. The demonstration of quantum Hall states in our high-quality Cd(3)As(2) films paves a road to study quantum transport and device application in topological Dirac semimetal and its derivative phases. Nature Publishing Group UK 2017-12-22 /pmc/articles/PMC5741620/ /pubmed/29273770 http://dx.doi.org/10.1038/s41467-017-02423-1 Text en © The Author(s) 2017 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Uchida, Masaki
Nakazawa, Yusuke
Nishihaya, Shinichi
Akiba, Kazuto
Kriener, Markus
Kozuka, Yusuke
Miyake, Atsushi
Taguchi, Yasujiro
Tokunaga, Masashi
Nagaosa, Naoto
Tokura, Yoshinori
Kawasaki, Masashi
Quantum Hall states observed in thin films of Dirac semimetal Cd(3)As(2)
title Quantum Hall states observed in thin films of Dirac semimetal Cd(3)As(2)
title_full Quantum Hall states observed in thin films of Dirac semimetal Cd(3)As(2)
title_fullStr Quantum Hall states observed in thin films of Dirac semimetal Cd(3)As(2)
title_full_unstemmed Quantum Hall states observed in thin films of Dirac semimetal Cd(3)As(2)
title_short Quantum Hall states observed in thin films of Dirac semimetal Cd(3)As(2)
title_sort quantum hall states observed in thin films of dirac semimetal cd(3)as(2)
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5741620/
https://www.ncbi.nlm.nih.gov/pubmed/29273770
http://dx.doi.org/10.1038/s41467-017-02423-1
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