Effect of Electron Blocking Layer Doping and Composition on the Performance of 310 nm Light Emitting Diodes

The effects of composition and p-doping profile of the AlGaN:Mg electron blocking layer (EBL) in 310 nm ultraviolet B (UV-B) light emitting diodes (LEDs) have been investigated. The carrier injection and internal quantum efficiency of the LEDs were simulated and compared to electroluminescence measu...

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Detalles Bibliográficos
Autores principales: Kolbe, Tim, Knauer, Arne, Rass, Jens, Cho, Hyun Kyong, Hagedorn, Sylvia, Einfeldt, Sven, Kneissl, Michael, Weyers, Markus
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5744331/
https://www.ncbi.nlm.nih.gov/pubmed/29211028
http://dx.doi.org/10.3390/ma10121396

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5744331/
https://www.ncbi.nlm.nih.gov/pubmed/29211028
http://dx.doi.org/10.3390/ma10121396

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