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Effect of Electron Blocking Layer Doping and Composition on the Performance of 310 nm Light Emitting Diodes
The effects of composition and p-doping profile of the AlGaN:Mg electron blocking layer (EBL) in 310 nm ultraviolet B (UV-B) light emitting diodes (LEDs) have been investigated. The carrier injection and internal quantum efficiency of the LEDs were simulated and compared to electroluminescence measu...
Autores principales: | Kolbe, Tim, Knauer, Arne, Rass, Jens, Cho, Hyun Kyong, Hagedorn, Sylvia, Einfeldt, Sven, Kneissl, Michael, Weyers, Markus |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2017
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5744331/ https://www.ncbi.nlm.nih.gov/pubmed/29211028 http://dx.doi.org/10.3390/ma10121396 |
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