1T1R Nonvolatile Memory with Al/TiO(2)/Au and Sol-Gel-Processed Insulator for Barium Zirconate Nickelate Gate in Pentacene Thin Film Transistor

A one-transistor and one-resistor (1T1R) architecture with a resistive random access memory (RRAM) cell connected to an organic thin-film transistor (OTFT) device is successfully demonstrated to avoid the cross-talk issues of only one RRAM cell. The OTFT device, which uses barium zirconate nickelate...

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Detalles Bibliográficos
Autores principales: Lee, Ke-Jing, Chang, Yu-Chi, Lee, Cheng-Jung, Wang, Li-Wen, Wang, Yeong-Her
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5744343/
https://www.ncbi.nlm.nih.gov/pubmed/29232828
http://dx.doi.org/10.3390/ma10121408

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5744343/
https://www.ncbi.nlm.nih.gov/pubmed/29232828
http://dx.doi.org/10.3390/ma10121408

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