Cargando…
1T1R Nonvolatile Memory with Al/TiO(2)/Au and Sol-Gel-Processed Insulator for Barium Zirconate Nickelate Gate in Pentacene Thin Film Transistor
A one-transistor and one-resistor (1T1R) architecture with a resistive random access memory (RRAM) cell connected to an organic thin-film transistor (OTFT) device is successfully demonstrated to avoid the cross-talk issues of only one RRAM cell. The OTFT device, which uses barium zirconate nickelate...
Autores principales: | Lee, Ke-Jing, Chang, Yu-Chi, Lee, Cheng-Jung, Wang, Li-Wen, Wang, Yeong-Her |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2017
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5744343/ https://www.ncbi.nlm.nih.gov/pubmed/29232828 http://dx.doi.org/10.3390/ma10121408 |
Ejemplares similares
-
High‐Performance Nonvolatile Organic Field‐Effect Transistor Memory Based on Organic Semiconductor Heterostructures of Pentacene/P13/Pentacene as Both Charge Transport and Trapping Layers
por: Li, Wen, et al.
Publicado: (2017) -
Graphene Oxide as a Dielectric and Charge Trap Element
in Pentacene-Based Organic Thin-Film Transistors for Nonvolatile Memory
por: Sarkar, Kalyan Jyoti, et al.
Publicado: (2019) -
Effect of Crystallization Modes in TIPS-pentacene/Insulating Polymer Blends on the Gas Sensing Properties of Organic Field-Effect Transistors
por: Lee, Jung Hun, et al.
Publicado: (2019) -
Energy Conversion Capacity of Barium Zirconate Titanate
por: Binhayeeniyi, Nawal, et al.
Publicado: (2020) -
Dielectric Properties and Switching Processes of Barium Titanate–Barium Zirconate Ferroelectric Superlattices
por: Sidorkin, Alexander, et al.
Publicado: (2018)