Bipolar Switching Properties of Neodymium Oxide RRAM Devices Using by a Low Temperature Improvement Method

Bipolar resistive switching properties and endurance switching behavior of the neodymium oxide (Nd(2)O(3)) thin films resistive random access memory (RRAM) devices for a high resistive status/low resistive status (HRS/LRS) using a low temperature supercritical carbon dioxide fluid (SCF) improvement...

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Detalles Bibliográficos
Autores principales: Chen, Kai-Huang, Kao, Ming-Cheng, Huang, Shou-Jen, Li, Jian-Zhi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5744350/
https://www.ncbi.nlm.nih.gov/pubmed/29231867
http://dx.doi.org/10.3390/ma10121415

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5744350/
https://www.ncbi.nlm.nih.gov/pubmed/29231867
http://dx.doi.org/10.3390/ma10121415

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