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Diffusion-Driven Charge Transport in Light Emitting Devices

Almost all modern inorganic light-emitting diode (LED) designs are based on double heterojunctions (DHJs) whose structure and current injection principle have remained essentially unchanged for decades. Although highly efficient devices based on the DHJ design have been developed and commercialized...

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Autores principales: Kim, Iurii, Kivisaari, Pyry, Oksanen, Jani, Suihkonen, Sami
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5744356/
https://www.ncbi.nlm.nih.gov/pubmed/29231900
http://dx.doi.org/10.3390/ma10121421
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author Kim, Iurii
Kivisaari, Pyry
Oksanen, Jani
Suihkonen, Sami
author_facet Kim, Iurii
Kivisaari, Pyry
Oksanen, Jani
Suihkonen, Sami
author_sort Kim, Iurii
collection PubMed
description Almost all modern inorganic light-emitting diode (LED) designs are based on double heterojunctions (DHJs) whose structure and current injection principle have remained essentially unchanged for decades. Although highly efficient devices based on the DHJ design have been developed and commercialized for energy-efficient general lighting, the conventional DHJ design requires burying the active region (AR) inside a pn-junction. This has hindered the development of emitters utilizing nanostructured ARs located close to device surfaces such as nanowires or surface quantum wells. Modern DHJ III-N LEDs also exhibit resistive losses that arise from the DHJ device geometry. The recently introduced diffusion-driven charge transport (DDCT) emitter design offers a novel way to transport charge carriers to unconventionally placed ARs. In a DDCT device, the AR is located apart from the pn-junction and the charge carriers are injected into the AR by bipolar diffusion. This device design allows the integration of surface ARs to semiconductor LEDs and offers a promising method to reduce resistive losses in high power devices. In this work, we present a review of the recent progress in gallium nitride (GaN) based DDCT devices, and an outlook of potential DDCT has for opto- and microelectronics.
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spelling pubmed-57443562017-12-31 Diffusion-Driven Charge Transport in Light Emitting Devices Kim, Iurii Kivisaari, Pyry Oksanen, Jani Suihkonen, Sami Materials (Basel) Review Almost all modern inorganic light-emitting diode (LED) designs are based on double heterojunctions (DHJs) whose structure and current injection principle have remained essentially unchanged for decades. Although highly efficient devices based on the DHJ design have been developed and commercialized for energy-efficient general lighting, the conventional DHJ design requires burying the active region (AR) inside a pn-junction. This has hindered the development of emitters utilizing nanostructured ARs located close to device surfaces such as nanowires or surface quantum wells. Modern DHJ III-N LEDs also exhibit resistive losses that arise from the DHJ device geometry. The recently introduced diffusion-driven charge transport (DDCT) emitter design offers a novel way to transport charge carriers to unconventionally placed ARs. In a DDCT device, the AR is located apart from the pn-junction and the charge carriers are injected into the AR by bipolar diffusion. This device design allows the integration of surface ARs to semiconductor LEDs and offers a promising method to reduce resistive losses in high power devices. In this work, we present a review of the recent progress in gallium nitride (GaN) based DDCT devices, and an outlook of potential DDCT has for opto- and microelectronics. MDPI 2017-12-12 /pmc/articles/PMC5744356/ /pubmed/29231900 http://dx.doi.org/10.3390/ma10121421 Text en © 2017 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Review
Kim, Iurii
Kivisaari, Pyry
Oksanen, Jani
Suihkonen, Sami
Diffusion-Driven Charge Transport in Light Emitting Devices
title Diffusion-Driven Charge Transport in Light Emitting Devices
title_full Diffusion-Driven Charge Transport in Light Emitting Devices
title_fullStr Diffusion-Driven Charge Transport in Light Emitting Devices
title_full_unstemmed Diffusion-Driven Charge Transport in Light Emitting Devices
title_short Diffusion-Driven Charge Transport in Light Emitting Devices
title_sort diffusion-driven charge transport in light emitting devices
topic Review
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5744356/
https://www.ncbi.nlm.nih.gov/pubmed/29231900
http://dx.doi.org/10.3390/ma10121421
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