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Diffusion-Driven Charge Transport in Light Emitting Devices
Almost all modern inorganic light-emitting diode (LED) designs are based on double heterojunctions (DHJs) whose structure and current injection principle have remained essentially unchanged for decades. Although highly efficient devices based on the DHJ design have been developed and commercialized...
Autores principales: | , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2017
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5744356/ https://www.ncbi.nlm.nih.gov/pubmed/29231900 http://dx.doi.org/10.3390/ma10121421 |
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author | Kim, Iurii Kivisaari, Pyry Oksanen, Jani Suihkonen, Sami |
author_facet | Kim, Iurii Kivisaari, Pyry Oksanen, Jani Suihkonen, Sami |
author_sort | Kim, Iurii |
collection | PubMed |
description | Almost all modern inorganic light-emitting diode (LED) designs are based on double heterojunctions (DHJs) whose structure and current injection principle have remained essentially unchanged for decades. Although highly efficient devices based on the DHJ design have been developed and commercialized for energy-efficient general lighting, the conventional DHJ design requires burying the active region (AR) inside a pn-junction. This has hindered the development of emitters utilizing nanostructured ARs located close to device surfaces such as nanowires or surface quantum wells. Modern DHJ III-N LEDs also exhibit resistive losses that arise from the DHJ device geometry. The recently introduced diffusion-driven charge transport (DDCT) emitter design offers a novel way to transport charge carriers to unconventionally placed ARs. In a DDCT device, the AR is located apart from the pn-junction and the charge carriers are injected into the AR by bipolar diffusion. This device design allows the integration of surface ARs to semiconductor LEDs and offers a promising method to reduce resistive losses in high power devices. In this work, we present a review of the recent progress in gallium nitride (GaN) based DDCT devices, and an outlook of potential DDCT has for opto- and microelectronics. |
format | Online Article Text |
id | pubmed-5744356 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2017 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-57443562017-12-31 Diffusion-Driven Charge Transport in Light Emitting Devices Kim, Iurii Kivisaari, Pyry Oksanen, Jani Suihkonen, Sami Materials (Basel) Review Almost all modern inorganic light-emitting diode (LED) designs are based on double heterojunctions (DHJs) whose structure and current injection principle have remained essentially unchanged for decades. Although highly efficient devices based on the DHJ design have been developed and commercialized for energy-efficient general lighting, the conventional DHJ design requires burying the active region (AR) inside a pn-junction. This has hindered the development of emitters utilizing nanostructured ARs located close to device surfaces such as nanowires or surface quantum wells. Modern DHJ III-N LEDs also exhibit resistive losses that arise from the DHJ device geometry. The recently introduced diffusion-driven charge transport (DDCT) emitter design offers a novel way to transport charge carriers to unconventionally placed ARs. In a DDCT device, the AR is located apart from the pn-junction and the charge carriers are injected into the AR by bipolar diffusion. This device design allows the integration of surface ARs to semiconductor LEDs and offers a promising method to reduce resistive losses in high power devices. In this work, we present a review of the recent progress in gallium nitride (GaN) based DDCT devices, and an outlook of potential DDCT has for opto- and microelectronics. MDPI 2017-12-12 /pmc/articles/PMC5744356/ /pubmed/29231900 http://dx.doi.org/10.3390/ma10121421 Text en © 2017 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Review Kim, Iurii Kivisaari, Pyry Oksanen, Jani Suihkonen, Sami Diffusion-Driven Charge Transport in Light Emitting Devices |
title | Diffusion-Driven Charge Transport in Light Emitting Devices |
title_full | Diffusion-Driven Charge Transport in Light Emitting Devices |
title_fullStr | Diffusion-Driven Charge Transport in Light Emitting Devices |
title_full_unstemmed | Diffusion-Driven Charge Transport in Light Emitting Devices |
title_short | Diffusion-Driven Charge Transport in Light Emitting Devices |
title_sort | diffusion-driven charge transport in light emitting devices |
topic | Review |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5744356/ https://www.ncbi.nlm.nih.gov/pubmed/29231900 http://dx.doi.org/10.3390/ma10121421 |
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