Effects of UV-Ozone Treatment on Sensing Behaviours of EGFETs with Al(2)O(3) Sensing Film

The effects of UV-ozone (UVO) treatment on the sensing behaviours of extended-gate field-effect transistors (EGFETs) that use Al(2)O(3) as the sensing film have been investigated. The Al(2)O(3) sensing films are UVO-treated with various duration times and the corresponding EGFET sensing behaviours,...

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Detalles Bibliográficos
Autores principales: Sun, Cuiling, Zeng, Ruixue, Zhang, Junkai, Qiu, Zhi-Jun, Wu, Dongping
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5744367/
https://www.ncbi.nlm.nih.gov/pubmed/29244769
http://dx.doi.org/10.3390/ma10121432

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5744367/
https://www.ncbi.nlm.nih.gov/pubmed/29244769
http://dx.doi.org/10.3390/ma10121432

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