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Effects of UV-Ozone Treatment on Sensing Behaviours of EGFETs with Al(2)O(3) Sensing Film
The effects of UV-ozone (UVO) treatment on the sensing behaviours of extended-gate field-effect transistors (EGFETs) that use Al(2)O(3) as the sensing film have been investigated. The Al(2)O(3) sensing films are UVO-treated with various duration times and the corresponding EGFET sensing behaviours,...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2017
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5744367/ https://www.ncbi.nlm.nih.gov/pubmed/29244769 http://dx.doi.org/10.3390/ma10121432 |