Sub-10 Nanometer Feature Size in Silicon Using Thermal Scanning Probe Lithography

[Image: see text] High-resolution lithography often involves thin resist layers which pose a challenge for pattern characterization. Direct evidence that the pattern was well-defined and can be used for device fabrication is provided if a successful pattern transfer is demonstrated. In the case of t...

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Detalles Bibliográficos
Autores principales: Ryu Cho, Yu Kyoung, Rawlings, Colin D., Wolf, Heiko, Spieser, Martin, Bisig, Samuel, Reidt, Steffen, Sousa, Marilyne, Khanal, Subarna R., Jacobs, Tevis D. B., Knoll, Armin W.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2017
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5746844/
https://www.ncbi.nlm.nih.gov/pubmed/29083870
http://dx.doi.org/10.1021/acsnano.7b06307

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5746844/
https://www.ncbi.nlm.nih.gov/pubmed/29083870
http://dx.doi.org/10.1021/acsnano.7b06307

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