Room-Temperature H(2) Gas Sensing Characterization of Graphene-Doped Porous Silicon via a Facile Solution Dropping Method

In this study, a graphene-doped porous silicon (G-doped/p-Si) substrate for low ppm H(2) gas detection by an inexpensive synthesis route was proposed as a potential noble graphene-based gas sensor material, and to understand the sensing mechanism. The G-doped/p-Si gas sensor was synthesized by a sim...

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Detalles Bibliográficos
Autores principales: Eom, Nu Si A., Cho, Hong-Baek, Song, Yoseb, Lee, Woojin, Sekino, Tohru, Choa, Yong-Ho
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Communication
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5751383/
https://www.ncbi.nlm.nih.gov/pubmed/29182573
http://dx.doi.org/10.3390/s17122750

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5751383/
https://www.ncbi.nlm.nih.gov/pubmed/29182573
http://dx.doi.org/10.3390/s17122750

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