Proton Radiation Effects on Dark Signal Distribution of PPD CMOS Image Sensors: Both TID and DDD Effects

Four-transistor (T) pinned photodiode (PPD) CMOS image sensors (CISs) with four-megapixel resolution using 11µm pitch high dynamic range pixel were radiated with 3 MeV and 10MeV protons. The dark signal was measured pre- and post-radiation, with the dark signal post irradiation showing a remarkable...

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Detalles Bibliográficos
Autores principales: Xue, Yuanyuan, Wang, Zujun, Chen, Wei, Liu, Minbo, He, Baoping, Yao, Zhibin, Sheng, Jiangkun, Ma, Wuying, Dong, Guantao, Jin, Junshan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5751517/
https://www.ncbi.nlm.nih.gov/pubmed/29189728
http://dx.doi.org/10.3390/s17122781

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5751517/
https://www.ncbi.nlm.nih.gov/pubmed/29189728
http://dx.doi.org/10.3390/s17122781

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