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A 45 nm Stacked CMOS Image Sensor Process Technology for Submicron Pixel †

A submicron pixel’s light and dark performance were studied by experiment and simulation. An advanced node technology incorporated with a stacked CMOS image sensor (CIS) is promising in that it may enhance performance. In this work, we demonstrated a low dark current of 3.2 e(−)/s at 60 °C, an ultra...

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Detalles Bibliográficos
Autores principales: Takahashi, Seiji, Huang, Yi-Min, Sze, Jhy-Jyi, Wu, Tung-Ting, Guo, Fu-Sheng, Hsu, Wei-Cheng, Tseng, Tung-Hsiung, Liao, King, Kuo, Chin-Chia, Chen, Tzu-Hsiang, Chiang, Wei-Chieh, Chuang, Chun-Hao, Chou, Keng-Yu, Chung, Chi-Hsien, Chou, Kuo-Yu, Tseng, Chien-Hsien, Wang, Chuan-Joung, Yaung, Dun-Nien
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5751557/
https://www.ncbi.nlm.nih.gov/pubmed/29206162
http://dx.doi.org/10.3390/s17122816