Cargando…
Statistical Analysis of the Random Telegraph Noise in a 1.1 μm Pixel, 8.3 MP CMOS Image Sensor Using On-Chip Time Constant Extraction Method †
A study of the random telegraph noise (RTN) of a 1.1 μm pitch, 8.3 Mpixel CMOS image sensor (CIS) fabricated in a 45 nm backside-illumination (BSI) technology is presented in this paper. A noise decomposition scheme is used to pinpoint the noise source. The long tail of the random noise (RN) distrib...
Autores principales: | Chao, Calvin Yi-Ping, Tu, Honyih, Wu, Thomas Meng-Hsiu, Chou, Kuo-Yu, Yeh, Shang-Fu, Yin, Chin, Lee, Chih-Lin |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2017
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5751670/ https://www.ncbi.nlm.nih.gov/pubmed/29168778 http://dx.doi.org/10.3390/s17122704 |
Ejemplares similares
-
Random Telegraph Noise Degradation Caused by Hot Carrier Injection in a 0.8 μm-Pitch 8.3Mpixel Stacked CMOS Image Sensor †
por: Chao, Calvin Yi-Ping, et al.
Publicado: (2023) -
Random Telegraph Noises from the Source Follower, the Photodiode Dark Current, and the Gate-Induced Sense Node Leakage in CMOS Image Sensors †
por: Chao, Calvin Yi-Ping, et al.
Publicado: (2019) -
Leakage Current Non-Uniformity and Random Telegraph Signals in CMOS Image Sensor Floating Diffusions Used for In-Pixel Charge Storage
por: Le Roch, Alexandre, et al.
Publicado: (2019) -
Stimulated Ionic Telegraph Noise in Filamentary Memristive Devices
por: Brivio, Stefano, et al.
Publicado: (2019) -
Investigation of random telegraph signal in two junction layouts of proton irradiated CMOS SPADs
por: Capua, F. Di, et al.
Publicado: (2021)