Cargando…
Determination of atomic vacancies in InAs/GaSb strained-layer superlattices by atomic strain
Determining vacancy in complex crystals or nanostructures represents an outstanding crystallographic problem that has a large impact on technology, especially for semiconductors, where vacancies introduce defect levels and modify the electronic structure. However, vacancy is hard to locate and its s...
| Autores principales: | , , , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
International Union of Crystallography
2018
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5755578/ https://www.ncbi.nlm.nih.gov/pubmed/29354272 http://dx.doi.org/10.1107/S2052252517016219 |