Deep level transient spectroscopic investigation of phosphorus-doped silicon by self-assembled molecular monolayers

It is known that self-assembled molecular monolayer doping technique has the advantages of forming ultra-shallow junctions and introducing minimal defects in semiconductors. In this paper, we report however the formation of carbon-related defects in the molecular monolayer-doped silicon as detected...

Descripción completa

Detalles Bibliográficos
Autores principales: Gao, Xuejiao, Guan, Bin, Mesli, Abdelmadjid, Chen, Kaixiang, Dan, Yaping
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5760684/
https://www.ncbi.nlm.nih.gov/pubmed/29317684
http://dx.doi.org/10.1038/s41467-017-02564-3

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5760684/
https://www.ncbi.nlm.nih.gov/pubmed/29317684
http://dx.doi.org/10.1038/s41467-017-02564-3

Ejemplares similares