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Deep level transient spectroscopic investigation of phosphorus-doped silicon by self-assembled molecular monolayers
It is known that self-assembled molecular monolayer doping technique has the advantages of forming ultra-shallow junctions and introducing minimal defects in semiconductors. In this paper, we report however the formation of carbon-related defects in the molecular monolayer-doped silicon as detected...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2018
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5760684/ https://www.ncbi.nlm.nih.gov/pubmed/29317684 http://dx.doi.org/10.1038/s41467-017-02564-3 |