Random telegraph noise from resonant tunnelling at low temperatures

The Random Telegraph Noise (RTN) in an advanced Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is considered to be triggered by just one electron or one hole, and its importance is recognised upon the aggressive scaling. However, the detailed nature of the charge trap remains to be inves...

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Detalles Bibliográficos
Autores principales: Li, Zuo, Sotto, Moïse, Liu, Fayong, Husain, Muhammad Khaled, Yoshimoto, Hiroyuki, Sasago, Yoshitaka, Hisamoto, Digh, Tomita, Isao, Tsuchiya, Yoshishige, Saito, Shinichi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5762822/
https://www.ncbi.nlm.nih.gov/pubmed/29321552
http://dx.doi.org/10.1038/s41598-017-18579-1

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5762822/
https://www.ncbi.nlm.nih.gov/pubmed/29321552
http://dx.doi.org/10.1038/s41598-017-18579-1

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