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Random telegraph noise from resonant tunnelling at low temperatures
The Random Telegraph Noise (RTN) in an advanced Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is considered to be triggered by just one electron or one hole, and its importance is recognised upon the aggressive scaling. However, the detailed nature of the charge trap remains to be inves...
Autores principales: | Li, Zuo, Sotto, Moïse, Liu, Fayong, Husain, Muhammad Khaled, Yoshimoto, Hiroyuki, Sasago, Yoshitaka, Hisamoto, Digh, Tomita, Isao, Tsuchiya, Yoshishige, Saito, Shinichi |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2018
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5762822/ https://www.ncbi.nlm.nih.gov/pubmed/29321552 http://dx.doi.org/10.1038/s41598-017-18579-1 |
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