Anomalous Hall-like effect probe of antiferromagnetic domain wall

Of crucial importance to antiferromagnetic (AF) spintronic devices, AF domain wall (AFDW), created in exchange biased Y(3)Fe(5)O(12)/Ni(0.50)Co(0.50)O (NiCoO)/Pt, is characterized by anomalous Hall-like effect through magnetic proximity effect and spin Hall magnetoresistance at NiCoO/Pt interface. T...

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Detalles Bibliográficos
Autores principales: Lang, Lili, Qiu, Xuepeng, Zhou, Shiming
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5762948/
https://www.ncbi.nlm.nih.gov/pubmed/29321481
http://dx.doi.org/10.1038/s41598-017-18514-4

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5762948/
https://www.ncbi.nlm.nih.gov/pubmed/29321481
http://dx.doi.org/10.1038/s41598-017-18514-4

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