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Anomalous Hall-like effect probe of antiferromagnetic domain wall

Of crucial importance to antiferromagnetic (AF) spintronic devices, AF domain wall (AFDW), created in exchange biased Y(3)Fe(5)O(12)/Ni(0.50)Co(0.50)O (NiCoO)/Pt, is characterized by anomalous Hall-like effect through magnetic proximity effect and spin Hall magnetoresistance at NiCoO/Pt interface. T...

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Detalles Bibliográficos
Autores principales:	Lang, Lili, Qiu, Xuepeng, Zhou, Shiming
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group UK 2018
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5762948/ https://www.ncbi.nlm.nih.gov/pubmed/29321481 http://dx.doi.org/10.1038/s41598-017-18514-4

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