Carrier Dynamics and Electro-Optical Characterization of High-Performance GaN/InGaN Core-Shell Nanowire Light-Emitting Diodes

In this work, we demonstrate high-performance electrically injected GaN/InGaN core-shell nanowire-based LEDs grown using selective-area epitaxy and characterize their electro-optical properties. To assess the quality of the quantum wells, we measure the internal quantum efficiency (IQE) using conven...

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Detalles Bibliográficos
Autores principales: Nami, Mohsen, Stricklin, Isaac E., DaVico, Kenneth M., Mishkat-Ul-Masabih, Saadat, Rishinaramangalam, Ashwin K., Brueck, S. R. J., Brener, Igal, Feezell, Daniel F.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5764991/
https://www.ncbi.nlm.nih.gov/pubmed/29323163
http://dx.doi.org/10.1038/s41598-017-18833-6

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5764991/
https://www.ncbi.nlm.nih.gov/pubmed/29323163
http://dx.doi.org/10.1038/s41598-017-18833-6

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