Observation of carrier localization in cubic crystalline Ge(2)Sb(2)Te(5) by field effect measurement

The tunable disorder of vacancies upon annealing is an important character of crystalline phase-change material Ge(2)Sb(2)Te(5) (GST). A variety of resistance states caused by different degrees of disorder can lead to the development of multilevel memory devices, which could bring a revolution to th...

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Detalles Bibliográficos
Autores principales: Qian, Hang, Tong, Hao, He, Ming-Ze, Ji, Hong-Kai, Zhou, Ling-Jun, Xu, Ming, Miao, Xiang-Shui
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5765150/
https://www.ncbi.nlm.nih.gov/pubmed/29323199
http://dx.doi.org/10.1038/s41598-017-18964-w

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5765150/
https://www.ncbi.nlm.nih.gov/pubmed/29323199
http://dx.doi.org/10.1038/s41598-017-18964-w

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