Study on the Multi-level Resistance-Switching Memory and Memory-State-Dependent Photovoltage in Pt/Nd:SrTiO(3) Junctions

Pt/Nd:SrTiO(3) (STO)/In devices were fabricated by depositing Schottky-contact Pt and Ohmic-contact In electrodes on a single crystal STO with Nd doping. The Pt/Nd:STO/In devices show multi-level resistance-switching (RS) memory and memory-state-dependent photovoltage (PV) effects, which can be cont...

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Detalles Bibliográficos
Autores principales: Wang, Shengkai, Sun, Xianwen, Li, Guanghui, Jia, Caihong, Li, Guoqiang, Zhang, Weifeng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2018
Materias:
Nano Idea
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5766446/
https://www.ncbi.nlm.nih.gov/pubmed/29330736
http://dx.doi.org/10.1186/s11671-018-2433-5

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5766446/
https://www.ncbi.nlm.nih.gov/pubmed/29330736
http://dx.doi.org/10.1186/s11671-018-2433-5

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