Band gap maps beyond the delocalization limit: correlation between optical band gaps and plasmon energies at the nanoscale

Recent progresses in nanoscale semiconductor technology have heightened the need for measurements of band gaps with high spatial resolution. Band gap mapping can be performed through a combination of probe-corrected scanning transmission electron microscopy (STEM) and monochromated electron energy-l...

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Detalles Bibliográficos
Autores principales: Zhan, Wei, Venkatachalapathy, Vishnukanthan, Aarholt, Thomas, Kuznetsov, Andrej Yu., Prytz, Øystein
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5770386/
https://www.ncbi.nlm.nih.gov/pubmed/29339788
http://dx.doi.org/10.1038/s41598-017-18949-9

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5770386/
https://www.ncbi.nlm.nih.gov/pubmed/29339788
http://dx.doi.org/10.1038/s41598-017-18949-9

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