Improved Linearity with Polarization Coulomb Field Scattering in AlGaN/GaN Heterostructure Field-Effect Transistors

The single-tone power of the AlGaN/GaN heterostructure field-effect transistors (HFETs) with different gate widths was measured. A distinct improvement in device linearity was observed in the sample with a larger gate width. The analysis of the variation of the parasitic source access resistance sho...

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Detalles Bibliográficos
Autores principales: Cui, Peng, Lv, Yuanjie, Liu, Huan, Cheng, Aijie, Fu, Chen, Lin, Zhaojun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5772463/
https://www.ncbi.nlm.nih.gov/pubmed/29343744
http://dx.doi.org/10.1038/s41598-018-19510-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5772463/
https://www.ncbi.nlm.nih.gov/pubmed/29343744
http://dx.doi.org/10.1038/s41598-018-19510-y

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