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Remarkably High Hole Mobility Metal-Oxide Thin-Film Transistors
High performance p-type thin-film transistor (p-TFT) was realized by a simple process of reactive sputtering from a tin (Sn) target under oxygen ambient, where remarkably high field-effect mobility (μ(FE)) of 7.6 cm(2)/Vs, 140 mV/dec subthreshold slope, and 3 × 10(4) on-current/off-current were meas...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2018
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5772488/ https://www.ncbi.nlm.nih.gov/pubmed/29343726 http://dx.doi.org/10.1038/s41598-017-17066-x |