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Remarkably High Hole Mobility Metal-Oxide Thin-Film Transistors

High performance p-type thin-film transistor (p-TFT) was realized by a simple process of reactive sputtering from a tin (Sn) target under oxygen ambient, where remarkably high field-effect mobility (μ(FE)) of 7.6 cm(2)/Vs, 140 mV/dec subthreshold slope, and 3 × 10(4) on-current/off-current were meas...

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Detalles Bibliográficos
Autores principales:	Shih, Cheng Wei, Chin, Albert, Lu, Chun Fu, Su, Wei Fang
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group UK 2018
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5772488/ https://www.ncbi.nlm.nih.gov/pubmed/29343726 http://dx.doi.org/10.1038/s41598-017-17066-x

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