Ultra-high Photoresponsivity in Suspended Metal-Semiconductor-Metal Mesoscopic Multilayer MoS(2) Broadband Detector from UV-to-IR with Low Schottky Barrier Contacts

The design, fabrication, and characterization of ultra-high responsivity photodetectors based on mesoscopic multilayer MoS(2) is presented, which is a less explored system compared to direct band gap monolayer MoS(2) that has received increasing attention in recent years. The device architecture is...

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Detalles Bibliográficos
Autores principales: Saenz, Gustavo A., Karapetrov, Goran, Curtis, James, Kaul, Anupama B.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5775306/
https://www.ncbi.nlm.nih.gov/pubmed/29352140
http://dx.doi.org/10.1038/s41598-018-19367-1

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5775306/
https://www.ncbi.nlm.nih.gov/pubmed/29352140
http://dx.doi.org/10.1038/s41598-018-19367-1

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