High-temperature operation of electrical injection type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum well lasers emitting at 1.3 µm

Electrical injection lasers emitting in the 1.3 μm wavelength regime based on (GaIn)As/Ga(AsSb)/(GaIn)As type-II double “W”-quantum well heterostructures grown on GaAs substrate are demonstrated. The structure is designed by applying a fully microscopic theory and fabricated using metal organic vapo...

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Detalles Bibliográficos
Autores principales: Fuchs, C., Brüggemann, A., Weseloh, M. J., Berger, C., Möller, C., Reinhard, S., Hader, J., Moloney, J. V., Bäumner, A., Koch, S. W., Stolz, W.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5780424/
https://www.ncbi.nlm.nih.gov/pubmed/29362369
http://dx.doi.org/10.1038/s41598-018-19189-1

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5780424/
https://www.ncbi.nlm.nih.gov/pubmed/29362369
http://dx.doi.org/10.1038/s41598-018-19189-1

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