High-temperature operation of electrical injection type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum well lasers emitting at 1.3 µm

Electrical injection lasers emitting in the 1.3 μm wavelength regime based on (GaIn)As/Ga(AsSb)/(GaIn)As type-II double “W”-quantum well heterostructures grown on GaAs substrate are demonstrated. The structure is designed by applying a fully microscopic theory and fabricated using metal organic vapo...

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Autores principales: Fuchs, C., Brüggemann, A., Weseloh, M. J., Berger, C., Möller, C., Reinhard, S., Hader, J., Moloney, J. V., Bäumner, A., Koch, S. W., Stolz, W.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
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Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5780424/
https://www.ncbi.nlm.nih.gov/pubmed/29362369
http://dx.doi.org/10.1038/s41598-018-19189-1
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author Fuchs, C.
Brüggemann, A.
Weseloh, M. J.
Berger, C.
Möller, C.
Reinhard, S.
Hader, J.
Moloney, J. V.
Bäumner, A.
Koch, S. W.
Stolz, W.
author_facet Fuchs, C.
Brüggemann, A.
Weseloh, M. J.
Berger, C.
Möller, C.
Reinhard, S.
Hader, J.
Moloney, J. V.
Bäumner, A.
Koch, S. W.
Stolz, W.
author_sort Fuchs, C.
collection PubMed
description Electrical injection lasers emitting in the 1.3 μm wavelength regime based on (GaIn)As/Ga(AsSb)/(GaIn)As type-II double “W”-quantum well heterostructures grown on GaAs substrate are demonstrated. The structure is designed by applying a fully microscopic theory and fabricated using metal organic vapor phase epitaxy. Temperature-dependent electroluminescence measurements as well as broad-area edge-emitting laser studies are carried out in order to characterize the resulting devices. Laser emission based on the fundamental type-II transition is demonstrated for a 975 μm long laser bar in the temperature range between 10 °C and 100 °C. The device exhibits a differential efficiency of 41 % and a threshold current density of 1.0 kA/cm(2) at room temperature. Temperature-dependent laser studies reveal characteristic temperatures of T(0) = (132 ± 3) K over the whole temperature range and T(1) = (159 ± 13) K between 10 °C and 70 °C and T(1) = (40 ± 1) K between 80 °C and 100 °C.
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spelling pubmed-57804242018-02-06 High-temperature operation of electrical injection type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum well lasers emitting at 1.3 µm Fuchs, C. Brüggemann, A. Weseloh, M. J. Berger, C. Möller, C. Reinhard, S. Hader, J. Moloney, J. V. Bäumner, A. Koch, S. W. Stolz, W. Sci Rep Article Electrical injection lasers emitting in the 1.3 μm wavelength regime based on (GaIn)As/Ga(AsSb)/(GaIn)As type-II double “W”-quantum well heterostructures grown on GaAs substrate are demonstrated. The structure is designed by applying a fully microscopic theory and fabricated using metal organic vapor phase epitaxy. Temperature-dependent electroluminescence measurements as well as broad-area edge-emitting laser studies are carried out in order to characterize the resulting devices. Laser emission based on the fundamental type-II transition is demonstrated for a 975 μm long laser bar in the temperature range between 10 °C and 100 °C. The device exhibits a differential efficiency of 41 % and a threshold current density of 1.0 kA/cm(2) at room temperature. Temperature-dependent laser studies reveal characteristic temperatures of T(0) = (132 ± 3) K over the whole temperature range and T(1) = (159 ± 13) K between 10 °C and 70 °C and T(1) = (40 ± 1) K between 80 °C and 100 °C. Nature Publishing Group UK 2018-01-23 /pmc/articles/PMC5780424/ /pubmed/29362369 http://dx.doi.org/10.1038/s41598-018-19189-1 Text en © The Author(s) 2018 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Fuchs, C.
Brüggemann, A.
Weseloh, M. J.
Berger, C.
Möller, C.
Reinhard, S.
Hader, J.
Moloney, J. V.
Bäumner, A.
Koch, S. W.
Stolz, W.
High-temperature operation of electrical injection type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum well lasers emitting at 1.3 µm
title High-temperature operation of electrical injection type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum well lasers emitting at 1.3 µm
title_full High-temperature operation of electrical injection type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum well lasers emitting at 1.3 µm
title_fullStr High-temperature operation of electrical injection type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum well lasers emitting at 1.3 µm
title_full_unstemmed High-temperature operation of electrical injection type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum well lasers emitting at 1.3 µm
title_short High-temperature operation of electrical injection type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum well lasers emitting at 1.3 µm
title_sort high-temperature operation of electrical injection type-ii (gain)as/ga(assb)/(gain)as “w”-quantum well lasers emitting at 1.3 µm
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5780424/
https://www.ncbi.nlm.nih.gov/pubmed/29362369
http://dx.doi.org/10.1038/s41598-018-19189-1
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