STM patterned nanowire measurements using photolithographically defined implants in Si(100)

Using photolithographically defined implant wires for electrical connections, we demonstrate measurement of a scanning tunneling microscope (STM) patterned nanoscale electronic device on Si(100). By eliminating onerous alignment and complex lithography techniques, this approach is accessible to rese...

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Detalles Bibliográficos
Autores principales: Ramanayaka, A. N., Kim, Hyun-Soo, Tang, Ke, Wang, X., Silver, R. M., Stewart, M. D., Pomeroy, J. M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5788944/
https://www.ncbi.nlm.nih.gov/pubmed/29379057
http://dx.doi.org/10.1038/s41598-018-20042-8

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5788944/
https://www.ncbi.nlm.nih.gov/pubmed/29379057
http://dx.doi.org/10.1038/s41598-018-20042-8

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