Gate Tunable Transport in Graphene/MoS(2)/(Cr/Au) Vertical Field-Effect Transistors

Two-dimensional materials based vertical field-effect transistors have been widely studied due to their useful applications in industry. In the present study, we fabricate graphene/MoS(2)/(Cr/Au) vertical transistor based on the mechanical exfoliation and dry transfer method. Since the bottom electr...

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Detalles Bibliográficos
Autores principales: Nazir, Ghazanfar, Khan, Muhammad Farooq, Aftab, Sikandar, Afzal, Amir Muhammad, Dastgeer, Ghulam, Rehman, Malik Abdul, Seo, Yongho, Eom, Jonghwa
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5791101/
https://www.ncbi.nlm.nih.gov/pubmed/29283377
http://dx.doi.org/10.3390/nano8010014

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5791101/
https://www.ncbi.nlm.nih.gov/pubmed/29283377
http://dx.doi.org/10.3390/nano8010014

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