Schottky Emission Distance and Barrier Height Properties of Bipolar Switching Gd:SiOx RRAM Devices under Different Oxygen Concentration Environments

In this study, the hopping conduction distance and bipolar switching properties of the Gd:SiOx thin film by (radio frequency, rf) rf sputtering technology for applications in RRAM devices were calculated and investigated. To discuss and verify the electrical switching mechanism in various different...

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Detalles Bibliográficos
Autores principales: Chen, Kai-Huang, Tsai, Tsung-Ming, Cheng, Chien-Min, Huang, Shou-Jen, Chang, Kuan-Chang, Liang, Shu-Ping, Young, Tai-Fa
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5793541/
https://www.ncbi.nlm.nih.gov/pubmed/29283368
http://dx.doi.org/10.3390/ma11010043

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5793541/
https://www.ncbi.nlm.nih.gov/pubmed/29283368
http://dx.doi.org/10.3390/ma11010043

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