Schottky Emission Distance and Barrier Height Properties of Bipolar Switching Gd:SiOx RRAM Devices under Different Oxygen Concentration Environments

In this study, the hopping conduction distance and bipolar switching properties of the Gd:SiOx thin film by (radio frequency, rf) rf sputtering technology for applications in RRAM devices were calculated and investigated. To discuss and verify the electrical switching mechanism in various different...

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Autores principales: Chen, Kai-Huang, Tsai, Tsung-Ming, Cheng, Chien-Min, Huang, Shou-Jen, Chang, Kuan-Chang, Liang, Shu-Ping, Young, Tai-Fa
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5793541/
https://www.ncbi.nlm.nih.gov/pubmed/29283368
http://dx.doi.org/10.3390/ma11010043
_version_ 1783296975890808832
author Chen, Kai-Huang
Tsai, Tsung-Ming
Cheng, Chien-Min
Huang, Shou-Jen
Chang, Kuan-Chang
Liang, Shu-Ping
Young, Tai-Fa
author_facet Chen, Kai-Huang
Tsai, Tsung-Ming
Cheng, Chien-Min
Huang, Shou-Jen
Chang, Kuan-Chang
Liang, Shu-Ping
Young, Tai-Fa
author_sort Chen, Kai-Huang
collection PubMed
description In this study, the hopping conduction distance and bipolar switching properties of the Gd:SiOx thin film by (radio frequency, rf) rf sputtering technology for applications in RRAM devices were calculated and investigated. To discuss and verify the electrical switching mechanism in various different constant compliance currents, the typical current versus applied voltage (I-V) characteristics of gadolinium oxide RRAM devices was transferred and fitted. Finally, the transmission electrons’ switching behavior between the TiN bottom electrode and Pt top electrode in the initial metallic filament forming process of the gadolinium oxide thin film RRAM devices for low resistance state (LRS)/high resistance state (HRS) was described and explained in a simulated physical diagram model.
format Online
Article
Text
id pubmed-5793541
institution National Center for Biotechnology Information
language English
publishDate 2017
publisher MDPI
record_format MEDLINE/PubMed
spelling pubmed-57935412018-02-07 Schottky Emission Distance and Barrier Height Properties of Bipolar Switching Gd:SiOx RRAM Devices under Different Oxygen Concentration Environments Chen, Kai-Huang Tsai, Tsung-Ming Cheng, Chien-Min Huang, Shou-Jen Chang, Kuan-Chang Liang, Shu-Ping Young, Tai-Fa Materials (Basel) Article In this study, the hopping conduction distance and bipolar switching properties of the Gd:SiOx thin film by (radio frequency, rf) rf sputtering technology for applications in RRAM devices were calculated and investigated. To discuss and verify the electrical switching mechanism in various different constant compliance currents, the typical current versus applied voltage (I-V) characteristics of gadolinium oxide RRAM devices was transferred and fitted. Finally, the transmission electrons’ switching behavior between the TiN bottom electrode and Pt top electrode in the initial metallic filament forming process of the gadolinium oxide thin film RRAM devices for low resistance state (LRS)/high resistance state (HRS) was described and explained in a simulated physical diagram model. MDPI 2017-12-28 /pmc/articles/PMC5793541/ /pubmed/29283368 http://dx.doi.org/10.3390/ma11010043 Text en © 2017 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Chen, Kai-Huang
Tsai, Tsung-Ming
Cheng, Chien-Min
Huang, Shou-Jen
Chang, Kuan-Chang
Liang, Shu-Ping
Young, Tai-Fa
Schottky Emission Distance and Barrier Height Properties of Bipolar Switching Gd:SiOx RRAM Devices under Different Oxygen Concentration Environments
title Schottky Emission Distance and Barrier Height Properties of Bipolar Switching Gd:SiOx RRAM Devices under Different Oxygen Concentration Environments
title_full Schottky Emission Distance and Barrier Height Properties of Bipolar Switching Gd:SiOx RRAM Devices under Different Oxygen Concentration Environments
title_fullStr Schottky Emission Distance and Barrier Height Properties of Bipolar Switching Gd:SiOx RRAM Devices under Different Oxygen Concentration Environments
title_full_unstemmed Schottky Emission Distance and Barrier Height Properties of Bipolar Switching Gd:SiOx RRAM Devices under Different Oxygen Concentration Environments
title_short Schottky Emission Distance and Barrier Height Properties of Bipolar Switching Gd:SiOx RRAM Devices under Different Oxygen Concentration Environments
title_sort schottky emission distance and barrier height properties of bipolar switching gd:siox rram devices under different oxygen concentration environments
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5793541/
https://www.ncbi.nlm.nih.gov/pubmed/29283368
http://dx.doi.org/10.3390/ma11010043
work_keys_str_mv AT chenkaihuang schottkyemissiondistanceandbarrierheightpropertiesofbipolarswitchinggdsioxrramdevicesunderdifferentoxygenconcentrationenvironments
AT tsaitsungming schottkyemissiondistanceandbarrierheightpropertiesofbipolarswitchinggdsioxrramdevicesunderdifferentoxygenconcentrationenvironments
AT chengchienmin schottkyemissiondistanceandbarrierheightpropertiesofbipolarswitchinggdsioxrramdevicesunderdifferentoxygenconcentrationenvironments
AT huangshoujen schottkyemissiondistanceandbarrierheightpropertiesofbipolarswitchinggdsioxrramdevicesunderdifferentoxygenconcentrationenvironments
AT changkuanchang schottkyemissiondistanceandbarrierheightpropertiesofbipolarswitchinggdsioxrramdevicesunderdifferentoxygenconcentrationenvironments
AT liangshuping schottkyemissiondistanceandbarrierheightpropertiesofbipolarswitchinggdsioxrramdevicesunderdifferentoxygenconcentrationenvironments
AT youngtaifa schottkyemissiondistanceandbarrierheightpropertiesofbipolarswitchinggdsioxrramdevicesunderdifferentoxygenconcentrationenvironments

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